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Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
https://repo.qst.go.jp/records/80305
https://repo.qst.go.jp/records/80305937be3eb-3190-4d3c-af36-64aa969635c8
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-08-07 | |||||
| タイトル | ||||||
| タイトル | Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Narahara, Takuma
× Narahara, Takuma× Sato, Shinichiro× Kojima, Kazutoshi× Yamazaki, Yuichi× Hijikata, Yasuto× Ohshima, Takeshi× Takuma, Narahara× Shinichiro, Sato× Yuichi, Yamazaki× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Spin defects of which states can be manipulated in Silicon Carbide (SiC) have drawn considerable attention because of their applications to quantum technologies. The single negatively-charged pairs of VSi and nitrogen atom (N) on an adjacent C site (NcVsi- center) in SiC is suitable for them. This paper reports the formation of NcVsi- centers on 4H-SiC epilayers with different nitrogen concentrations using light/heavy ion irradiation and subsequent thermal annealing. The formation of NcVsi- centers is characterized by the near infrared photoluminescence (PL) spectroscopy. It is shown that the PL intensity from NcVsi- centers depends on the N concentration and the ion irradiation conditions. The PL intensity increases monotonically with increasing the N concentration when the N concentration is above 2.6×10^16 cm^-3 , whereas no linear correlation between them does not appear below that N concentration. Although the PL intensity increases with increasing defects induced by ion irradiation, the PL quenching due to neighboring residual defects appear at above the areal vacancy concentration of 10^17 vac/cm^2 and the broad Raman scattering spectra originated from vibration modes of amorphized regions hinder the PL from NcVsi- centers at above 10^18 vac/cm^2. The formation mechanism and the charge state stability of NcVsi- centers are discussed based on the obtained results. |
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| 書誌情報 |
Materials Science Forum 巻 1004, p. 349-354, 発行日 2020-08 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.1004.349 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net/MSF.1004.349 | |||||
