{"created":"2023-05-15T14:59:11.264574+00:00","id":80305,"links":{},"metadata":{"_buckets":{"deposit":"200e779a-2ed7-4f81-a971-981628846fda"},"_deposit":{"created_by":1,"id":"80305","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80305"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080305","sets":["1"]},"author_link":["940161","940160","940155","940154","940157","940158","940153","940159","940156","940162"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"354","bibliographicPageStart":"349","bibliographicVolumeNumber":"1004","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Spin defects of which states can be manipulated in Silicon Carbide (SiC) have drawn considerable attention because of their applications to quantum technologies. The single negatively-charged pairs of VSi and nitrogen atom (N) on an adjacent C site (NcVsi- center) in SiC is suitable for them. This paper reports the formation of NcVsi- centers on 4H-SiC epilayers with different nitrogen concentrations using light/heavy ion irradiation and subsequent thermal annealing. The formation of NcVsi- centers is characterized by the near infrared photoluminescence (PL) spectroscopy. It is shown that the PL intensity from NcVsi- centers depends on the N concentration and the ion irradiation conditions. The PL intensity increases monotonically with increasing the N\nconcentration when the N concentration is above 2.6×10^16 cm^-3 , whereas no linear correlation between them does not appear below that N concentration. Although the PL intensity increases with increasing defects induced by ion irradiation, the PL quenching due to neighboring residual defects appear at above the areal vacancy concentration of 10^17 vac/cm^2 and the broad Raman scattering spectra originated from vibration modes of amorphized regions hinder the PL from NcVsi- centers at above 10^18 vac/cm^2. The formation mechanism and the charge state stability of NcVsi- centers are discussed based on the obtained results.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.1004.349","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.scientific.net/MSF.1004.349","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Narahara, Takuma"}],"nameIdentifiers":[{"nameIdentifier":"940153","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"940154","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kojima, Kazutoshi"}],"nameIdentifiers":[{"nameIdentifier":"940155","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"940156","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Yasuto"}],"nameIdentifiers":[{"nameIdentifier":"940157","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"940158","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takuma, Narahara","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"940159","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"940160","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"940161","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"940162","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-08-07"},"publish_date":"2020-08-07","publish_status":"0","recid":"80305","relation_version_is_last":true,"title":["Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:23:31.933327+00:00"}