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Influence of Irradiation on Defect Spin Coherence in Silicon Carbide
https://repo.qst.go.jp/records/79920
https://repo.qst.go.jp/records/799200704c0d8-2e13-4988-8d6d-a81e2ae3ee20
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-04-27 | |||||
タイトル | ||||||
タイトル | Influence of Irradiation on Defect Spin Coherence in Silicon Carbide | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Kasper, C.
× Kasper, C.× Klenkert, D.× Shang, Z.× Simin, D.× Gottscholl, A.× Sperlich, A.× Kraus, H.× Schneider, C.× Zhou, S.× Trupke, M.× Kada, W.× Ohshima, Takeshi× Dyakonov, V.× V. Astakhov, G.× Ohshima, Takeshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Irradiation-induced lattice defects in silicon carbide (SiC) are regarded as promising candidates for a multitude of quantum-information applications and quantum sensing. One of the most crucial parameters of any quantum system is the quantum coherence for the defects. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time (T1) and spin-coherence time (T2) of silicon vacancies in 4H-SiC created by neutron, electron, and proton irradiation in a broad range of fluences. In addition, we investigated the effect of irradiation energy and sample annealing. We establish a robustness of the T1 time against all types of irradiation and reveal a universal scaling of the T2 time with the emitter density. Our results can be used to optimize the coherence properties of silicon-vacancy qubits in SiC for specific tasks. |
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書誌情報 |
Physical Review Applied 巻 13, p. 044054, 発行日 2020-04 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2331-7019 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1103/PhysRevApplied.13.044054 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.044054 |