ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

  1. 原著論文

In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN

https://repo.qst.go.jp/records/77782
https://repo.qst.go.jp/records/77782
4e6ad6a5-a92a-46cf-9af2-012a1753af12
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-12-03
タイトル
タイトル In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Yamaguchi, Tomohiro

× Yamaguchi, Tomohiro

WEKO 1001317

Yamaguchi, Tomohiro

Search repository
Sasaki, Takuo

× Sasaki, Takuo

WEKO 1001318

Sasaki, Takuo

Search repository
Fujikawa, Seiji

× Fujikawa, Seiji

WEKO 1001319

Fujikawa, Seiji

Search repository
Takahashi, Masamitsu

× Takahashi, Masamitsu

WEKO 1001320

Takahashi, Masamitsu

Search repository
Araki, Tsutomu

× Araki, Tsutomu

WEKO 1001321

Araki, Tsutomu

Search repository
Onuma, Takeyoshi

× Onuma, Takeyoshi

WEKO 1001322

Onuma, Takeyoshi

Search repository
Honda, Tohru

× Honda, Tohru

WEKO 1001323

Honda, Tohru

Search repository
Nanishi, Yasushi

× Nanishi, Yasushi

WEKO 1001324

Nanishi, Yasushi

Search repository
Takuo, Sasaki

× Takuo, Sasaki

WEKO 1001325

en Takuo, Sasaki

Search repository
Seiji, Fujikawa

× Seiji, Fujikawa

WEKO 1001326

en Seiji, Fujikawa

Search repository
Masamitsu, Takahashi

× Masamitsu, Takahashi

WEKO 1001327

en Masamitsu, Takahashi

Search repository
抄録
内容記述タイプ Abstract
内容記述 In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by RF-MBE on commercialized GaN/c-sapphire templates. In situ XRD RSM measurements were performed using an MBE apparatus directly coupled to an X-ray diffractometer at the beamline of the synchrotron radiation facility SPring-8. It was observed in situ that both lattice relaxation and compositional pulling occurred during the initial growth stage, reducing the strain of GaInN on GaN and InN. Different initial growth behaviors of GaInN on GaN and InN were also observed from the results of the evolution of GaInN integrated peak intensities.
書誌情報 Crystals

巻 9, 号 12, p. 631-1, 発行日 2019-11
出版者
出版者 MDPI AG
ISSN
収録物識別子タイプ ISSN
収録物識別子 2073-4352
DOI
識別子タイプ DOI
関連識別子 10.3390/cryst9120631
関連サイト
識別子タイプ URI
関連識別子 https://www.mdpi.com/2073-4352/9/12/631
戻る
0
views
See details
Views

Versions

Ver.1 2023-05-15 17:30:43.608814
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR 2.0
  • OAI-PMH JPCOAR 1.0
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3