{"created":"2023-05-15T14:57:19.052174+00:00","id":77782,"links":{},"metadata":{"_buckets":{"deposit":"48c2bc03-0501-4301-839e-adc6d80d3981"},"_deposit":{"created_by":1,"id":"77782","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77782"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077782","sets":["1"]},"author_link":["1001322","1001327","1001321","1001325","1001324","1001326","1001323","1001317","1001320","1001319","1001318"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageStart":"631-1","bibliographicVolumeNumber":"9","bibliographic_titles":[{"bibliographic_title":"Crystals"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by RF-MBE on commercialized GaN/c-sapphire templates. In situ XRD RSM measurements were performed using an MBE apparatus directly coupled to an X-ray diffractometer at the beamline of the synchrotron radiation facility SPring-8. It was observed in situ that both lattice relaxation and compositional pulling occurred during the initial growth stage, reducing the strain of GaInN on GaN and InN. Different initial growth behaviors of GaInN on GaN and InN were also observed from the results of the evolution of GaInN integrated peak intensities. ","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"MDPI AG"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.3390/cryst9120631","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.mdpi.com/2073-4352/9/12/631","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2073-4352","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamaguchi, Tomohiro"}],"nameIdentifiers":[{"nameIdentifier":"1001317","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo"}],"nameIdentifiers":[{"nameIdentifier":"1001318","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujikawa, Seiji"}],"nameIdentifiers":[{"nameIdentifier":"1001319","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu"}],"nameIdentifiers":[{"nameIdentifier":"1001320","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Araki, Tsutomu"}],"nameIdentifiers":[{"nameIdentifier":"1001321","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onuma, Takeyoshi"}],"nameIdentifiers":[{"nameIdentifier":"1001322","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Honda, Tohru"}],"nameIdentifiers":[{"nameIdentifier":"1001323","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nanishi, Yasushi"}],"nameIdentifiers":[{"nameIdentifier":"1001324","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takuo, Sasaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1001325","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiji, Fujikawa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1001326","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Masamitsu, Takahashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1001327","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-12-03"},"publish_date":"2019-12-03","publish_status":"0","recid":"77782","relation_version_is_last":true,"title":["In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:38:09.539166+00:00"}