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Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC
https://repo.qst.go.jp/records/49232
https://repo.qst.go.jp/records/4923281dd1c72-ba4c-4141-ae00-83055ef42aef
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-11-01 | |||||
タイトル | ||||||
タイトル | Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Brodar, T.
× Brodar, T.× Capan, I.× Radulovic, V.× Snoj, L.× Pastuovic, Z.× Coutinho, J.× Ohshima, Takeshi× 大島 武 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | This paper studies the electrically active deep level defects introduced in epitaxial n-type 4H-SiC layers by epithermal and fast neutrons, using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutrons create additional point defects with energy levels at Ec below 0.40 eV and Ec below 0.70 eV. |
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書誌情報 |
Nuclear Instruments and Methods in Physics Research B 巻 437, p. 27-31, 発行日 2018-10 |
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DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.nimb.2018.10.030 |