@article{oai:repo.qst.go.jp:00049232,
 author = {Brodar, T. and Capan, I. and Radulovic, V. and Snoj, L. and Pastuovic, Z. and Coutinho, J. and Ohshima, Takeshi and 大島 武},
 journal = {Nuclear Instruments and Methods in Physics Research B},
 month = {Oct},
 note = {This paper studies the electrically active deep level defects introduced 
in epitaxial n-type 4H-SiC layers by epithermal and fast neutrons, using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutrons create additional point defects with energy levels at Ec below 0.40 eV and Ec below 0.70 eV.},
 pages = {27--31},
 title = {Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC},
 volume = {437},
 year = {2018}
}