{"created":"2023-05-15T14:38:09.368450+00:00","id":49232,"links":{},"metadata":{"_buckets":{"deposit":"e4c6cd33-8c77-4883-9082-7fc80b3f5092"},"_deposit":{"created_by":1,"id":"49232","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49232"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049232","sets":["1"]},"author_link":["496724","496718","496723","496725","496722","496720","496721","496719"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"31","bibliographicPageStart":"27","bibliographicVolumeNumber":"437","bibliographic_titles":[{"bibliographic_title":"Nuclear Instruments and Methods in Physics Research B"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This paper studies the electrically active deep level defects introduced \nin epitaxial n-type 4H-SiC layers by epithermal and fast neutrons, using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutrons create additional point defects with energy levels at Ec below 0.40 eV and Ec below 0.70 eV.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.nimb.2018.10.030","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Brodar, T."}],"nameIdentifiers":[{"nameIdentifier":"496718","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Capan, I."}],"nameIdentifiers":[{"nameIdentifier":"496719","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Radulovic, V."}],"nameIdentifiers":[{"nameIdentifier":"496720","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Snoj, L."}],"nameIdentifiers":[{"nameIdentifier":"496721","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pastuovic, Z."}],"nameIdentifiers":[{"nameIdentifier":"496722","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Coutinho, J."}],"nameIdentifiers":[{"nameIdentifier":"496723","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"496724","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"496725","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-01"},"publish_date":"2018-11-01","publish_status":"0","recid":"49232","relation_version_is_last":true,"title":["Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:20:31.674754+00:00"}