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4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
https://repo.qst.go.jp/records/49125
https://repo.qst.go.jp/records/49125af2aa419-6c71-40fe-ac0e-f80a6e99c524
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-02 | |||||
| タイトル | ||||||
| タイトル | 4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Kajihara, J.
× Kajihara, J.× Kuroki, S.-I.× Ishikawa, S.× Maeda, T.× Sezaki, H.× Makino, Takahiro× Ohshima, Takeshi× Östling, M.× Zetterling, C.-M.× 牧野 高紘× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were fabricated and their characterization were measured at up to a temperature of 200 C. The Nb/Ni stack silicide with the contact resistance of 5.04×10^3 Ωcm^2 were demonstrated. |
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| 書誌情報 |
Materials Science Forum 巻 924, p. 423-427, 発行日 2018-07 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.924.423 | |||||
