{"created":"2023-05-15T14:38:04.675384+00:00","id":49125,"links":{},"metadata":{"_buckets":{"deposit":"74eb6090-6596-4670-a444-c9e63599875b"},"_deposit":{"created_by":1,"id":"49125","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49125"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049125","sets":["1"]},"author_link":["495612","495607","495615","495613","495610","495616","495609","495608","495611","495606","495614"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"427","bibliographicPageStart":"423","bibliographicVolumeNumber":"924","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were\nfabricated and their characterization were measured at up to a temperature of 200 C. The Nb/Ni stack silicide with the contact resistance of 5.04×10^3 Ωcm^2 were demonstrated.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.924.423","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kajihara, J."}],"nameIdentifiers":[{"nameIdentifier":"495606","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuroki, S.-I."}],"nameIdentifiers":[{"nameIdentifier":"495607","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, S."}],"nameIdentifiers":[{"nameIdentifier":"495608","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maeda, T."}],"nameIdentifiers":[{"nameIdentifier":"495609","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sezaki, H."}],"nameIdentifiers":[{"nameIdentifier":"495610","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"495611","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"495612","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Östling, M."}],"nameIdentifiers":[{"nameIdentifier":"495613","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zetterling, C.-M."}],"nameIdentifiers":[{"nameIdentifier":"495614","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"495615","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"495616","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-02"},"publish_date":"2018-08-02","publish_status":"0","recid":"49125","relation_version_is_last":true,"title":["4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:21:03.782285+00:00"}