@article{oai:repo.qst.go.jp:00049125,
 author = {Kajihara, J. and Kuroki, S.-I. and Ishikawa, S. and Maeda, T. and Sezaki, H. and Makino, Takahiro and Ohshima, Takeshi and Östling, M. and Zetterling, C.-M. and 牧野 高紘 and 大島 武},
 journal = {Materials Science Forum},
 month = {Jul},
 note = {4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were
fabricated and their characterization were measured at up to a temperature of 200 C. The Nb/Ni stack silicide with the contact resistance of 5.04×10^3 Ωcm^2 were demonstrated.},
 pages = {423--427},
 title = {4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts},
 volume = {924},
 year = {2018}
}