量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
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Historically, the exploration of III-V compound semiconductors has begun with small bandgap materials and proceeded to large bandgap ones in recent years, that is, from GaAs-based compounds to GaN-based ones. We consider that gallium oxide (Ga2O3 ) is no exception in following this history and is poised to become the next mainstream of compound semiconductor research due to its attractive material properties based on an extremely large bandgap of about 4.5 eV. This bandgap energy is not only much larger than those of representative wide bandgap semiconductors such as GaN and SiC but also unique among single-crystal semiconductors. Furthermore, Ga2O3 has another important advantage for commercialization over the other wide bandgap materials in that large-size, high-quality bulk single crystals can be synthesized by melt growth methods, thus allowing native substrates to be produced at a relatively low cost. Recently, these two features have drawn much attention to Ga2O3, resulting in a rapid expansion of the Ga2O3 community.
Recent advances in Ga2O3 MOSFET technologies
