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  1. 原著論文

Visualization of light-emitting diode lighting damage process in radiation environment by an in situ measurement

https://repo.qst.go.jp/records/86491
https://repo.qst.go.jp/records/86491
6f09e4cc-8be3-41a8-88a7-79905e2b46c0
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-12-17
タイトル
タイトル Visualization of light-emitting diode lighting damage process in radiation environment by an in situ measurement
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Yuji, Hosaka

× Yuji, Hosaka

WEKO 1058696

Yuji, Hosaka

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Nobuyuki, Nishimori

× Nobuyuki, Nishimori

WEKO 1058697

Nobuyuki, Nishimori

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Itoga, Toshiro

× Itoga, Toshiro

WEKO 1058698

Itoga, Toshiro

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Nakazawa, Shingo

× Nakazawa, Shingo

WEKO 1058699

Nakazawa, Shingo

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Tanaka, Shinichiro

× Tanaka, Shinichiro

WEKO 1058700

Tanaka, Shinichiro

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Seno, Toshio

× Seno, Toshio

WEKO 1058701

Seno, Toshio

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Kondo, Chikara

× Kondo, Chikara

WEKO 1058702

Kondo, Chikara

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Inagaki, Takahiro

× Inagaki, Takahiro

WEKO 1058703

Inagaki, Takahiro

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Fukui, Toru

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WEKO 1058704

Fukui, Toru

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Watanabe, Takahiro

× Watanabe, Takahiro

WEKO 1058705

Watanabe, Takahiro

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Tanaka, Hitoshi

× Tanaka, Hitoshi

WEKO 1058706

Tanaka, Hitoshi

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Yuji, Hosaka

× Yuji, Hosaka

WEKO 1058707

en Yuji, Hosaka

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Nobuyuki, Nishimori

× Nobuyuki, Nishimori

WEKO 1058708

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抄録
内容記述タイプ Abstract
内容記述 We investigated the radiation damage process of commercially available light-emitting diode (LED) lightings in an X-ray radiation environment such as the electron storage ring SPring-8. It was found that metal-oxide-semiconductor field-effect transistors (MOSFETs) in the LED power supplies were damaged by X-ray irradiation by the total dose effect greater than several hundred Gy (air kerma). To visualize the whole damage process, we performed in situ measurement of the MOSFET under an irradiation from an X-ray tube. The result clearly showed a sudden increase of the off-state drain current accompanying with a sharp increase of MOSFET temperature as a function of radiation dose, which eventually caused the device failure. We supposed from the result a significant increase of device lifetime by switching off the LED power supply and experimentally verified it by observing the increase of lifetime by an order of magnitude or more under the same irradiation condition. The revealed X-ray radiation damage process is expected to provide useful tips for employing LED lightings in X-ray radiation environments.
書誌情報 Japanese Journal of Applied Physics

巻 61, 号 7, p. 076504, 発行日 2022-07
出版者
出版者 IOP Publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-4922
DOI
識別子タイプ DOI
関連識別子 10.35848/1347-4065/ac7836
関連サイト
識別子タイプ URI
関連識別子 https://iopscience.iop.org/article/10.35848/1347-4065/ac7836
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