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Structural analysis of high-energy implanted Ni atoms into Si(100) by X-ray absorption fine structure spectroscopy
https://repo.qst.go.jp/records/86438
https://repo.qst.go.jp/records/864388bb186d7-ab1d-44e4-9ac9-9b4735420cad
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-06-29 | |||||
| タイトル | ||||||
| タイトル | Structural analysis of high-energy implanted Ni atoms into Si(100) by X-ray absorption fine structure spectroscopy | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Shiro, Entani
× Shiro, Entani× Shinichiro, Sato× Mitsunori, Honda× Chihiro, Suzuki× Tomitsugu, Taguchi× Shunya, Yamamoto× Takeshi, Ohshima× Shiro, Entani× Shinichiro, Sato× Chihiro, Suzuki× Tomitsugu, Taguchi× Shunya, Yamamoto× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Ni silicide synthesis by Ni ion beam irradiation into Si attracts attention due to its advantages including the ability of formation of local structures, the controllability of ion beams, the formability of silicide without heat treatment and the high reproducibility of the resulting specimen. In this work, we investigate the local atomic structure of Si implanted with 3.0 MeV Ni^+ ions. Analysis of Ni K -edge fluorescent-yield extended X-ray absorption fine structure reveals that Ni atoms have mixed structure of metallic-like face-centered cubic Ni and NiSi_2 phases at the initial stage of the irradiation and the formation of NiSi_2 promotes significantly with the ion fluence above 10^15 ions・cm^-2 . With consideration of the agreement between the ion fluence threshold for the structural transition and the critical Si-amorphization fluence (7.1 × 10^14 ions・cm^-2 ), it is concluded that the amorphization of Si plays an important role in the synthesis of the NiSi_2 phase in Ni~+ -irradiated Si. | |||||
| 書誌情報 |
radiation physics and chemistry 号 199, p. 110369, 発行日 2022-07 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.radphyschem.2022.110369 | |||||
