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Study of laser excitation and damage in silicon using Three-Temperature model
https://repo.qst.go.jp/records/86428
https://repo.qst.go.jp/records/864280b5b586e-0ae2-45a4-9028-b7d2ca5ec0a2
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-06-20 | |||||
| タイトル | ||||||
| タイトル | Study of laser excitation and damage in silicon using Three-Temperature model | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Venkat, Prachi
× Venkat, Prachi× Tomohito, Otobe× Venkat, Prachi× Tomohito, Otobe |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Numerical study of laser excitation in silicon helps in understanding the physical processes during excitation and the consequent onset of damage in the target. We present Three-Temperature model which considers the electron, hole and lattice temperatures separately. The effect of changing field and band re-normalization is also considered. The damage threshold and possible damage mechanisms are studied for silicon and the calculated threshold is compared with the experimental data. We also study the effect of change in laser wavelength on the dynamics and damage threshold. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | OPTO2022 Symposium | |||||
| 発表年月日 | ||||||
| 日付 | 2022-06-28 | |||||
| 日付タイプ | Issued | |||||
