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Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide
https://repo.qst.go.jp/records/86316
https://repo.qst.go.jp/records/863164303a0d0-1d4a-4f1a-9c0d-a4be6d671b10
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-06-16 | |||||
タイトル | ||||||
タイトル | Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Morioka, Naoya
× Morioka, Naoya× Liu, Di× O. Soykal, Oney× Gediz, Izel× Babin, Charles× Stohr, Rainer× Takeshi, Ohshima× Tien Son, Nguyen× Jawad, Ul-Hassan× Kaiser, Florian× Wrachtrup, Jorg× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we fully study the spin-optical dynamics of the single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sublifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of the V1 center’s spin-optical dynamics, our work provides deep understanding of the system, which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide. |
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書誌情報 |
Physical Review Applied 巻 17, p. 054005-1-054005-15, 発行日 2022-06 |
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DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1103/PhysRevApplied.17.054005 |