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  1. 原著論文

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

https://repo.qst.go.jp/records/86316
https://repo.qst.go.jp/records/86316
4303a0d0-1d4a-4f1a-9c0d-a4be6d671b10
Item type 学術雑誌論文 / Journal Article(1)
公開日 2022-06-16
タイトル
タイトル Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Morioka, Naoya

× Morioka, Naoya

WEKO 1052458

Morioka, Naoya

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Liu, Di

× Liu, Di

WEKO 1052459

Liu, Di

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O. Soykal, Oney

× O. Soykal, Oney

WEKO 1052460

O. Soykal, Oney

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Gediz, Izel

× Gediz, Izel

WEKO 1052461

Gediz, Izel

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Babin, Charles

× Babin, Charles

WEKO 1052462

Babin, Charles

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Stohr, Rainer

× Stohr, Rainer

WEKO 1052463

Stohr, Rainer

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1052464

Takeshi, Ohshima

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Tien Son, Nguyen

× Tien Son, Nguyen

WEKO 1052465

Tien Son, Nguyen

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Jawad, Ul-Hassan

× Jawad, Ul-Hassan

WEKO 1052466

Jawad, Ul-Hassan

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Kaiser, Florian

× Kaiser, Florian

WEKO 1052467

Kaiser, Florian

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Wrachtrup, Jorg

× Wrachtrup, Jorg

WEKO 1052468

Wrachtrup, Jorg

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1052469

en Takeshi, Ohshima

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内容記述タイプ Abstract
内容記述 Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we fully study the spin-optical dynamics of the single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sublifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of the V1 center’s spin-optical
dynamics, our work provides deep understanding of the system, which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide.
書誌情報 Physical Review Applied

巻 17, p. 054005-1-054005-15, 発行日 2022-06
DOI
識別子タイプ DOI
関連識別子 10.1103/PhysRevApplied.17.054005
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