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Study of ultrafast lattice dynamics in silicon using Three-Temperature model

https://repo.qst.go.jp/records/85643
https://repo.qst.go.jp/records/85643
08a9d244-f0fb-4f6b-9d6e-89310c9f2bcd
Item type 会議発表用資料 / Presentation(1)
公開日 2021-12-28
タイトル
タイトル Study of ultrafast lattice dynamics in silicon using Three-Temperature model
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Venkat, Prachi

× Venkat, Prachi

WEKO 1043825

Venkat, Prachi

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Tomohito, Otobe

× Tomohito, Otobe

WEKO 1043826

Tomohito, Otobe

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Venkat, Prachi

× Venkat, Prachi

WEKO 1043827

en Venkat, Prachi

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Tomohito, Otobe

× Tomohito, Otobe

WEKO 1043828

en Tomohito, Otobe

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抄録
内容記述タイプ Abstract
内容記述 We would like to present a new Three-Temperature model (3TM) based on nTTM, to calculate electron, hole and lattice temperatures separately. The model calculates the single and double photon absorption by including the effect of band structure re-normalization. Drude model is used to calculate the dielectric function, including the effect of electron-hole and carrier-phonon collisions. Maxwell's equations are solved using Finite Difference Time Domain (FDTD) method to describe the laser field. A comparison of experimental thresholds from Allenspacher et. al. (Proc. SPIE, 4932:358, 2003), with theoretical results for a 775 nm pulse is done. Damage in silicon may be due to thermal effects and electron emission from surface, depending on the incident pulse duration. 3TM calculations also hold up for different pulse wavelengths, making it a promising tool to study laser excitation. 3TM can be of significant use in quantifying the damage mechanisms and in manipulating laser parameters and optical properties of material to induce desired structural modifications.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 The 69th JSAP Spring meeting 2022
発表年月日
日付 2022-03-22
日付タイプ Issued
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