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M-Center in Neutron-Irradiated 4H-SiC
https://repo.qst.go.jp/records/85245
https://repo.qst.go.jp/records/85245436074cc-4685-4ab5-971e-08e78ca5afdf
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-03-15 | |||||
| タイトル | ||||||
| タイトル | M-Center in Neutron-Irradiated 4H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Capan, Ivana
× Capan, Ivana× Brodar, Tomislav× Takahiro, Makino× Radulovic, Vladimir× Snoj, Luka× Takahiro, Makino |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M4, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects. | |||||
| 書誌情報 |
Crystals 巻 11, 号 11, 発行日 2021-11 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2073-4352 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.3390/cryst11111404 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.mdpi.com/2073-4352/11/11/1404 | |||||
