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Optically detected magnetic resonance of silicon vacancies in 4H-SiC with different temperatures
https://repo.qst.go.jp/records/85135
https://repo.qst.go.jp/records/851352aa1d91b-24c3-4df6-80d2-3ed4fabcca54
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-03-09 | |||||
| タイトル | ||||||
| タイトル | Optically detected magnetic resonance of silicon vacancies in 4H-SiC with different temperatures | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Shu, Motoki
× Shu, Motoki× Shinichiro, Sato× Yuichi, Yamazaki× Yuta, Masuyama× Seiichi, Saiki× Yasuto, Hijokata× Takeshi, Ohshima× Shu, Motoki× Shinichiro, Sato× Yuichi, Yamazaki× Yuta, Masuyama× Seiichi, Saiki× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon vacancy (VSi) centers in silicon carbide have attracted attention because of their potential applications to quantum sensors (high-sensitivity magnetic field and temperature sensors). VSi centers are also expected to be used for magnetic sensors under harsh environments such as space and undergrounds, since they have structural stability and the potential of high-fidelity spin manipulation at high temperatures. To realize VSi based magnetic sensors operating at high temperature, understanding of optically detected magnetic resonance (ODMR) in the ground states of VSi centers, which is the basic principle of magnetic sensing, is crucial. In particular, the effects of temperature on the ODMR spectra are less well understood. Here, we demonstrate the potential of VSi magnetic sensors at high temperatures by showing the ODMR spectra with different temperatures. We also systematically investigate the effects of high energy electron irradiations on the ODMR spectra of formed VSi centers. The concentration of VSi centers increases with increasing electron irradiation dose, resulting in the enhancement of sensitivity, but the increase of undesired defects which might cause decoherence is also considered. Hence, the effects of electron irradiation dose should be clarified to obtain better sensitivity of VSi based magnetic sensors. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 4th International Forum on Quantum Metrology and Sensing | |||||
| 発表年月日 | ||||||
| 日付 | 2021-12-08 | |||||
| 日付タイプ | Issued | |||||
