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  1. 原著論文

Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering

https://repo.qst.go.jp/records/84653
https://repo.qst.go.jp/records/84653
108fe2c6-3cc7-40ca-aaee-6c2671e12262
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-12-10
タイトル
タイトル Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Atsumi, Miyashita

× Atsumi, Miyashita

WEKO 1021693

Atsumi, Miyashita

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Masaki, Maekawa

× Masaki, Maekawa

WEKO 1021694

Masaki, Maekawa

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Chihiro, Suzuki

× Chihiro, Suzuki

WEKO 1021695

Chihiro, Suzuki

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Shunya, Yamamoto

× Shunya, Yamamoto

WEKO 1021696

Shunya, Yamamoto

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Atsuo, Kawasuso

× Atsuo, Kawasuso

WEKO 1021697

Atsuo, Kawasuso

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WANG, Jian

× WANG, Jian

WEKO 1021698

WANG, Jian

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Takeshi, Seki

× Takeshi, Seki

WEKO 1021699

Takeshi, Seki

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Rie, Umetsu

× Rie, Umetsu

WEKO 1021700

Rie, Umetsu

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Koki, Takanashi

× Koki, Takanashi

WEKO 1021701

Koki, Takanashi

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Atsumi, Miyashita

× Atsumi, Miyashita

WEKO 1021702

en Atsumi, Miyashita

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Masaki, Maekawa

× Masaki, Maekawa

WEKO 1021703

en Masaki, Maekawa

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Chihiro, Suzuki

× Chihiro, Suzuki

WEKO 1021704

en Chihiro, Suzuki

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Shunya, Yamamoto

× Shunya, Yamamoto

WEKO 1021705

en Shunya, Yamamoto

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Atsuo, Kawasuso

× Atsuo, Kawasuso

WEKO 1021706

en Atsuo, Kawasuso

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抄録
内容記述タイプ Abstract
内容記述 Co2MnGa is known as a Weyl semimetal exhibiting giant anomalous Hall and Nernst effects. However, the performance of Co2MnGa thin films grown on MgO(001) by the magnetron sputtering method is somewhat lower than that of the bulk crystals. Here, we attempted to improve the electrical transport properties by post-growth annealing at temperatures from 573 to 773 K. X-ray diffraction analysis indicated that the degree of long-range order changed from A2 to B2 plus L21 upon annealing at 673 K or above. Positron annihilation spectroscopy revealed the presence of high-density (≿100 ppm) divacancies, which were absent in the bulk crystal, and their partial improvement near the Co2MnGa/MgO interface on annealing at 673 K or above. Accompanying these structural changes, the longitudinal and anomalous Hall conductivities increased considerably and the anomalous Hall angle reached a maximum value of 11.8%. These findings imply that the post-growth annealing improved the electrical transport properties of Co2MnGa films through the development of long-range crystal order and reduction of divacancies. However, the electrical performance achieved by thermal annealing was still insufficient in comparison with the bulk crystals, and hence for further improvement, alternative approaches may need to be considered.
書誌情報 Journal of Applied Physics

巻 130, 号 22, p. 225301, 発行日 2021-12
出版者
出版者 AIP Publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979
DOI
識別子タイプ DOI
関連識別子 10.1063/5.0071807
関連サイト
識別子タイプ URI
関連識別子 https://aip.scitation.org/doi/10.1063/5.0071807
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