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Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering
https://repo.qst.go.jp/records/84653
https://repo.qst.go.jp/records/84653108fe2c6-3cc7-40ca-aaee-6c2671e12262
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-12-10 | |||||
タイトル | ||||||
タイトル | Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Atsumi, Miyashita
× Atsumi, Miyashita× Masaki, Maekawa× Chihiro, Suzuki× Shunya, Yamamoto× Atsuo, Kawasuso× WANG, Jian× Takeshi, Seki× Rie, Umetsu× Koki, Takanashi× Atsumi, Miyashita× Masaki, Maekawa× Chihiro, Suzuki× Shunya, Yamamoto× Atsuo, Kawasuso |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Co2MnGa is known as a Weyl semimetal exhibiting giant anomalous Hall and Nernst effects. However, the performance of Co2MnGa thin films grown on MgO(001) by the magnetron sputtering method is somewhat lower than that of the bulk crystals. Here, we attempted to improve the electrical transport properties by post-growth annealing at temperatures from 573 to 773 K. X-ray diffraction analysis indicated that the degree of long-range order changed from A2 to B2 plus L21 upon annealing at 673 K or above. Positron annihilation spectroscopy revealed the presence of high-density (≿100 ppm) divacancies, which were absent in the bulk crystal, and their partial improvement near the Co2MnGa/MgO interface on annealing at 673 K or above. Accompanying these structural changes, the longitudinal and anomalous Hall conductivities increased considerably and the anomalous Hall angle reached a maximum value of 11.8%. These findings imply that the post-growth annealing improved the electrical transport properties of Co2MnGa films through the development of long-range crystal order and reduction of divacancies. However, the electrical performance achieved by thermal annealing was still insufficient in comparison with the bulk crystals, and hence for further improvement, alternative approaches may need to be considered. | |||||
書誌情報 |
Journal of Applied Physics 巻 130, 号 22, p. 225301, 発行日 2021-12 |
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出版者 | ||||||
出版者 | AIP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-8979 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/5.0071807 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://aip.scitation.org/doi/10.1063/5.0071807 |