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Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars
https://repo.qst.go.jp/records/84433
https://repo.qst.go.jp/records/84433ddff0b2c-312a-4901-af70-86c0c33a72da
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-10-19 | |||||
タイトル | ||||||
タイトル | Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
A. Parker, R.
× A. Parker, R.× Dontschuk, N.× Shinichiro, Sato× C., T.-K. Lew× Reineck, P.× Nadarajah, A.× Takeshi, Ohshima× C. Gibson, B.× Castelletto, S.× C. McCallum, J.× C. Johnson, B.× Shinichiro, Sato× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Color centers that emit light at telecommunication wavelengths are promising candidates for future quantum technologies. A pressing challenge for the broad use of these color centers is the typically low collection efficiency from bulk samples. Here, we demonstrate enhancements of the emission collection efficiency for Er3+ incorporated into 4H-SiC surface nano-pillars fabricated using a scalable top-down approach. Optimal Er ion implantation and annealing strategies are investigated in detail. The substitutional fraction of Er atoms in the SiC lattice is closely correlated with the peak photoluminescence intensity. This intensity is further enhanced via spatial wave-guiding once the surface is patterned with nano-pillars. These results have broad applicability for use with other color centers in SiC and also demonstrate a step toward a scalable protocol for fabricating photonic quantum devices with enhanced emission characteristics. | |||||
書誌情報 |
Journal of Applied Physics 巻 130, 号 14, p. 145101, 発行日 2021-10 |
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出版者 | ||||||
出版者 | AIP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-8979 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/5.0055100 | |||||
関連サイト | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/5.0055100 |