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  1. 原著論文

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

https://repo.qst.go.jp/records/84227
https://repo.qst.go.jp/records/84227
9ac06942-4ee4-418b-8ca6-b603d0c552de
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-09-28
タイトル
タイトル Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Nakane, Hiroki

× Nakane, Hiroki

WEKO 1017443

Nakane, Hiroki

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Kato, Masashi

× Kato, Masashi

WEKO 1017444

Kato, Masashi

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Ohkouchi, Yutaro

× Ohkouchi, Yutaro

WEKO 1017445

Ohkouchi, Yutaro

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Thang Trinh, Xuan

× Thang Trinh, Xuan

WEKO 1017446

Thang Trinh, Xuan

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G. Ivanov, Ivan

× G. Ivanov, Ivan

WEKO 1017447

G. Ivanov, Ivan

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1017448

Takeshi, Ohshima

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Tien Son, Nguyen

× Tien Son, Nguyen

WEKO 1017449

Tien Son, Nguyen

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1017450

en Takeshi, Ohshima

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抄録
内容記述タイプ Abstract
内容記述 Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are used to study irradiation-induced defects in high-purity semi-insulating (HPSI) 4H-SiC. Several deep levels with the ionization energy ranging from 0.1 to 1.1 eV have been observed in irradiated and annealed samples by PICTS. Among these, two deep levels, labeled E370 and E700 at 0.72 and 1.07 eV below the conduction band, respectively, are detected after high-temperature annealing. The appearance and disappearance of these two deep levels and the EPR signal of the positive C antisite–vacancy pair (CSiVC) in the sample annealed at 1000 and 1200 C, respectively, are well correlated. Based on data from PICTS and EPR and the energies predicted by previous calculations for different charge states of dominant intrinsic defects, the E370 and E700 levels are suggested to be related to the charge transition levels (0/–) and (+/0), respectively, of the C antisite-vacancy pair. The activation energy of Ea 1.1 eV in commercial HPSI 4H-SiC materials is, therefore, reassigned to be related to the single donor (+/0) level of CSiVC.
書誌情報 Journal of Applied Physics

巻 130, p. 065703, 発行日 2021-08
出版者
出版者 AIP publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979
DOI
識別子タイプ DOI
関連識別子 10.1063/5.0059953
関連サイト
識別子タイプ URI
関連識別子 https://aip.scitation.org/doi/full/10.1063/5.0059953
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