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  1. 原著論文

Fluorescent Silicon Carbide Nanoparticles

https://repo.qst.go.jp/records/84186
https://repo.qst.go.jp/records/84186
d5990cc7-0801-4e12-a537-a2070d4c00ec
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-09-08
タイトル
タイトル Fluorescent Silicon Carbide Nanoparticles
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 O. de Vries, Mitchell

× O. de Vries, Mitchell

WEKO 1017113

O. de Vries, Mitchell

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Shinichiro, Sato

× Shinichiro, Sato

WEKO 1017114

Shinichiro, Sato

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1017115

Takeshi, Ohshima

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C. Gibson, Brant

× C. Gibson, Brant

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C. Gibson, Brant

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Jean-Marie, Bluet

× Jean-Marie, Bluet

WEKO 1017117

Jean-Marie, Bluet

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Castelletto, Stefania

× Castelletto, Stefania

WEKO 1017118

Castelletto, Stefania

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C. Johnson, Brett

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WEKO 1017119

C. Johnson, Brett

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Reineck, Philipp

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WEKO 1017120

Reineck, Philipp

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Shinichiro, Sato

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WEKO 1017121

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Takeshi, Ohshima

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WEKO 1017122

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抄録
内容記述タイプ Abstract
内容記述 Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet to the near-infrared spectral ranges, and their sizes can be tuned from one to hundreds of nanometers. Yet, fluorescent SiC NPs have received far less attention by the scientific community. This review summarizes the state-of-the-art in fluorescent SiC NPs. Nanoparticle fabrication methods, characterization techniques, nanoparticle surface chemistry, and SiC NPs fluorescence properties are assessed in detail. Atomic defects and impurities in the SiC crystal lattice (so-called color centers), surface-induced fluorescence, quantum confinement, and band-edge fluorescence are identified as the main sources of fluorescence in SiC NPs. While many color centers are reported in bulk SiC, only few are identified in SiC NPs and interface-related defects remain poorly understood, creating enormous potential for scientific discovery. Finally, an overview of demonstrated and emerging potential applications of SiC NPs in the areas of bioimaging and quantum sensing is provided.
書誌情報 Advanced Optical Materials

巻 9, 号 20, p. 2100311, 発行日 2021-07
出版者
出版者 Wiley
ISSN
収録物識別子タイプ ISSN
収録物識別子 2195-1071
DOI
識別子タイプ DOI
関連識別子 10.1002/adom.202100311
関連サイト
識別子タイプ URI
関連識別子 https://onlinelibrary.wiley.com/doi/abs/10.1002/adom.202100311
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