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  1. 原著論文

Creation of silicon vacancy color centers with a narrow emission line in nanodiamonds by ion implantation

https://repo.qst.go.jp/records/82948
https://repo.qst.go.jp/records/82948
e9b2c958-681b-4f90-89f6-e3acb98f5112
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-06-08
タイトル
タイトル Creation of silicon vacancy color centers with a narrow emission line in nanodiamonds by ion implantation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Takashima, Hideaki

× Takashima, Hideaki

WEKO 1031482

Takashima, Hideaki

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Fukuda, Atsushi

× Fukuda, Atsushi

WEKO 1031483

Fukuda, Atsushi

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Shimazaki, Konosuke

× Shimazaki, Konosuke

WEKO 1031484

Shimazaki, Konosuke

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Iwabata, Yusuke

× Iwabata, Yusuke

WEKO 1031485

Iwabata, Yusuke

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Kawaguchi, Hiroki

× Kawaguchi, Hiroki

WEKO 1031486

Kawaguchi, Hiroki

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W. Schell, Andreas

× W. Schell, Andreas

WEKO 1031487

W. Schell, Andreas

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Tashima, Toshiyuki

× Tashima, Toshiyuki

WEKO 1031488

Tashima, Toshiyuki

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Hiroshi, Abe

× Hiroshi, Abe

WEKO 1031489

Hiroshi, Abe

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Shinobu, Onoda

× Shinobu, Onoda

WEKO 1031490

Shinobu, Onoda

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1031491

Takeshi, Ohshima

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Takeuchi, Shigeki

× Takeuchi, Shigeki

WEKO 1031492

Takeuchi, Shigeki

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Hiroshi, Abe

× Hiroshi, Abe

WEKO 1031493

en Hiroshi, Abe

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Shinobu, Onoda

× Shinobu, Onoda

WEKO 1031494

en Shinobu, Onoda

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1031495

en Takeshi, Ohshima

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抄録
内容記述タイプ Abstract
内容記述 Nanodiamonds containing silicon-vacancy (SiV) centers with high brightness, high photo-stability, and a narrow zero phonon line (ZPL) have attracted attention for bioimaging, nanoscale thermometry, and quantum technologies. One method to create such nanodiamonds is the milling of diamond films synthesized by chemical vapor deposition (CVD). However, this requires post-processing such as acid treatment and centrifugation after the milling process.
Therefore, the number of SiV center-containing nanodiamonds made from an initial CVD diamond is small. An alternative method without these problems is the implantation of Si ions into preselected nanodiamonds. This method, however, has an issue regarding the ZPL linewidths, which are more than twice as broad as those in nanodiamonds synthesized by CVD. In order to reduce the linewidth, we employed annealing treatment at high temperatures (up to 1100°C) and high vacuum after the implantation. For an ion fluence of 10^13 ions/cm^2, a ZPL with a linewidth of about 7 nm at room temperature was observed for a nanodiamond with a median size of 29.9 ± 16.0 nm. This was close to the linewidth for nanodiamonds created by CVD.
書誌情報 Optical Materials Express

巻 11, 号 7, p. 1978-1988, 発行日 2021-06
ISSN
収録物識別子タイプ ISSN
収録物識別子 2159-3930
DOI
識別子タイプ DOI
関連識別子 10.1364/OME.424786
関連サイト
識別子タイプ URI
関連識別子 https://www.osapublishing.org/ome/fulltext.cfm?uri=ome-11-7-1978&id=451727
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