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Fabrication of SiV centers inside nanodiamonds using ion implantation

https://repo.qst.go.jp/records/82153
https://repo.qst.go.jp/records/82153
907c5058-a1b9-47b7-905d-ea9adbaaa3c9
Item type 会議発表用資料 / Presentation(1)
公開日 2021-03-15
タイトル
タイトル Fabrication of SiV centers inside nanodiamonds using ion implantation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Shimazaki, Konosuke

× Shimazaki, Konosuke

WEKO 934604

Shimazaki, Konosuke

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Takashima, Hideaki

× Takashima, Hideaki

WEKO 934605

Takashima, Hideaki

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Fukuda, Atsushi

× Fukuda, Atsushi

WEKO 934606

Fukuda, Atsushi

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W. Schell, Andreas

× W. Schell, Andreas

WEKO 934607

W. Schell, Andreas

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Tashima, Toshiyuki

× Tashima, Toshiyuki

WEKO 934608

Tashima, Toshiyuki

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Hiroshi, Abe

× Hiroshi, Abe

WEKO 934609

Hiroshi, Abe

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Shinobu, Onoda

× Shinobu, Onoda

WEKO 934610

Shinobu, Onoda

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 934611

Takeshi, Ohshima

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Hiroshi, Abe

× Hiroshi, Abe

WEKO 934612

en Hiroshi, Abe

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Shinobu, Onoda

× Shinobu, Onoda

WEKO 934613

en Shinobu, Onoda

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 934614

en Takeshi, Ohshima

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抄録
内容記述タイプ Abstract
内容記述 Nanodiamonds containing color centers have been attracting attention as a hybrid system with nanophotonic devices to realize photonic quantum information devices such as highly efficient single photon sources. In various color centers, silicon vacancy (SiV) centers are especially interesting because of high photo-stability, high brightness, high Debye-Waller factor (about 70%), and lifetime-limited fluorescence linewidth. The nanodiamonds containing SiV centers have been usually fabricated by milling large nanodiamonds with SiV centers, which are synthesized by chemical vapor deposition (CVD). However, this milling method has an issue with the production yield. Here, we report on the fabrication of SiV centers inside nanodiamonds by direct implantation of Si ions, which allows the creation at a high production yield due to no requirement of the milling process. By implanting Si ions into nanodiamonds (median size of 25 nm), we fabricate SiV centers exhibiting a narrow linewidth of about 7 nm at room temperature. This linewidth is more than twice as narrow as previous reports on the implantation of Si ions into nanodiamonds.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 3rd IFQMS
発表年月日
日付 2020-12-17
日付タイプ Issued
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Ver.1 2023-05-15 17:45:50.675511
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