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  1. 原著論文

Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor

https://repo.qst.go.jp/records/82053
https://repo.qst.go.jp/records/82053
66baade1-e199-4bbd-bd8f-f7d515966c23
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-03-01
タイトル
タイトル Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Saya, Fujii

× Saya, Fujii

WEKO 1010335

Saya, Fujii

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Jun, Kano

× Jun, Kano

WEKO 1010336

Jun, Kano

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Norihiro, Oshime

× Norihiro, Oshime

WEKO 1010337

Norihiro, Oshime

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Tohru, Higuchi

× Tohru, Higuchi

WEKO 1010338

Tohru, Higuchi

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Yuta, Nishina

× Yuta, Nishina

WEKO 1010339

Yuta, Nishina

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Tatsuo, Fujii

× Tatsuo, Fujii

WEKO 1010340

Tatsuo, Fujii

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Naoshi, Ikeda

× Naoshi, Ikeda

WEKO 1010341

Naoshi, Ikeda

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Hiromi, Ota

× Hiromi, Ota

WEKO 1010342

Hiromi, Ota

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Norihiro, Oshime

× Norihiro, Oshime

WEKO 1010343

en Norihiro, Oshime

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抄録
内容記述タイプ Abstract
内容記述 We report the band structure of Ba-deficient BaTiO3 as a p-type semiconductor, studied by a combination of light reflectance and photoelectron yield spectroscopy. Two acceptor levels were observed at the tail of a valence band. As the quantity of Ba vacancies increased, the density of state of the two acceptor levels also increased. The levels of the conduction band minimum and the valence band maximum shifted far away from the vacuum level, but the bandgap seems to be independent of Ba deficient concentration. For classical semiconductors such as Si and GaAs, the observation of impurity levels is restricted to low temperatures (∼20 K) owing to their narrow bandgaps. Oxide semiconductors have now been demonstrated with wide bandgaps and acceptor levels, at normal operating temperatures, which could lead to new device designs in the future.
書誌情報 Journal of Applied Physics

巻 129, 号 8, p. 084105, 発行日 2021-02
出版者
出版者 AIP Publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979
DOI
識別子タイプ DOI
関連識別子 10.1063/5.0033761
関連サイト
識別子タイプ URI
関連識別子 https://aip.scitation.org/doi/10.1063/5.0033761
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