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Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations
https://repo.qst.go.jp/records/81971
https://repo.qst.go.jp/records/81971dcf8038b-fc9a-4b28-afe3-b813fbb06fb4
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-02-24 | |||||
| タイトル | ||||||
| タイトル | Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Yuichi, Yamazaki
× Yuichi, Yamazaki× Yoji, Chiba× Shinichiro, Sato× Takahiro, Makino× Naoto, Yamada× Takahiro, Sato× Kojima, Kazutoshi× Hijikata, Yasuto× Tsuchida, Hidekazu× Hoshino, Norihiro× Sang-Yun, Lee× Takeshi, Ohshima× Yuichi, Yamazaki× Yoji, Chiba× Shinichiro, Sato× Takahiro, Makino× Naoto, Yamada× Takahiro, Satoh× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon carbide (SiC) is an important wide bandgap semiconductor used for diverse applications from heat spreading to high-power electronics. It is readily doped, has high thermal conductivity, and is used for application in mature device fabrication techniques. To improve the performance of SiC electronic devices, built-in sensors, which should ideally be inexpensive integrated with the device, and not perturb device operations, are quite useful. Here, we studied the optical properties of the negatively silicon vacancy under simultaneous optical and electrical excitation to uncover the carrier dynamics, as the luminescence intensity is determined by competition between the two excitation pathways. We also observe optically detected magnetic resonance (ODMR) and observe that the ODMR contrast is decreased by injected current, which is consistent with the decrease in the pumping rate of optical excitation in the competitive process. Our studies show that an embedded quantum sensor is possible in practical SiC devices, opening new opportunities for device control and optimization. |
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| 書誌情報 |
Applied Physics Letters 巻 118, p. 021106, 発行日 2021-01 |
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| 出版者 | ||||||
| 出版者 | AIP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/5.0028318 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://aip.scitation.org/doi/full/10.1063/5.0028318 | |||||
