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  1. 原著論文

Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices

https://repo.qst.go.jp/records/81925
https://repo.qst.go.jp/records/81925
a128f0e6-9415-468c-b47c-12a808d81757
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-02-16
タイトル
タイトル Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 M. Hoang, T.

× M. Hoang, T.

WEKO 1012970

M. Hoang, T.

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Ishiwata, H.

× Ishiwata, H.

WEKO 1012971

Ishiwata, H.

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Yuta, Masuyama

× Yuta, Masuyama

WEKO 1012972

Yuta, Masuyama

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Yuichi, Yamazaki

× Yuichi, Yamazaki

WEKO 1012973

Yuichi, Yamazaki

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Kojima, K.

× Kojima, K.

WEKO 1012974

Kojima, K.

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S.-Y., Lee

× S.-Y., Lee

WEKO 1012975

S.-Y., Lee

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1012976

Takeshi, Ohshima

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Iwasaki, T.

× Iwasaki, T.

WEKO 1012977

Iwasaki, T.

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Hisamoto, D.

× Hisamoto, D.

WEKO 1012978

Hisamoto, D.

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Mutsuko, Hatano

× Mutsuko, Hatano

WEKO 1012979

Mutsuko, Hatano

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Yuta, Masuyama

× Yuta, Masuyama

WEKO 1012980

en Yuta, Masuyama

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Yuichi, Yamazaki

× Yuichi, Yamazaki

WEKO 1012981

en Yuichi, Yamazaki

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1012982

en Takeshi, Ohshima

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Mutsuko, Hatano

× Mutsuko, Hatano

WEKO 1012983

en Mutsuko, Hatano

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抄録
内容記述タイプ Abstract
内容記述 We characterized the excited state (ES) and the ground state (GS) of negatively charged silicon vacancy (V−Si) centers in hexagonal silicon carbide (4H-SiC) using optically detected magnetic resonance (ODMR) to realize thermometric quantum sensors. We report the observation of inverted contrast between ODMR signals of the ES and the GS and clarify the effect of energy sublevels of spin states in 4H-SiC. We confirm that ES ODMR signals of V−Si centers are dependent on the temperature with a thermal shift of 2 MHz/K on zero-field splitting (ZFS). Thus, we fabricated microscale dots of V−Si centers in a 4H-SiC p–n diode using proton beam writing and demonstrated the operation of thermometric quantum sensors by measuring the temperature change induced by an injected current. Our demonstration paves the way for the development of atomic-size thermometers inside SiC power devices for future applications.
書誌情報 Applied Physics Letters

巻 118, 号 4, p. 044001, 発行日 2021-02
出版者
出版者 AIP Publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 0003-6951
DOI
識別子タイプ DOI
関連識別子 10.1063/5.0027603
関連サイト
識別子タイプ URI
関連識別子 https://aip.scitation.org/doi/10.1063/5.0027603
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