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Membrane-heater-integrated LSI for on-site annealing-recovery from 20kGy gamma ray irradiation damage
https://repo.qst.go.jp/records/81759
https://repo.qst.go.jp/records/817596050c9f5-47a4-4129-ba1c-f8c09cc89c33
Item type | 会議発表用資料 / Presentation(1) | |||||
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公開日 | 2020-12-10 | |||||
タイトル | ||||||
タイトル | Membrane-heater-integrated LSI for on-site annealing-recovery from 20kGy gamma ray irradiation damage | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Gong, Tianjiao
× Gong, Tianjiao× Suzuki, Yukio× Takeyama, Akinori× Ohshima, Takeshi× Shuji Tanaka× Akinori, Takeyama× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In this study, we proposed a novel membrane-heater integrated LSI for on-site annealing-recovery from TID effect with low energy consumption, aiming at solving the problem of IC damage by gamma ray irradiation. The heater and membrane structure were fabricated around the LSI by using integrated MEMS technology. 20 kGy gamma-ray irradiation was performed later on the LSI samples and then the irradiated samples were annealed for recovery by integrated membrane-heater. It was found that the current of LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing at 300 ℃. We report, for the first time, the successful recovery of LSI with 15 minutes from 20 kGy gamma-ray TID damage by using an integrated membrane-heater. |
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会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The 34th International Conference on Micro Electro Mechanical Systems (IEEE MEMS 2021) | |||||
発表年月日 | ||||||
日付 | 2021-01-26 | |||||
日付タイプ | Issued |