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Membrane-heater-integrated LSI for on-site annealing-recovery from 20kGy gamma ray irradiation damage

https://repo.qst.go.jp/records/81759
https://repo.qst.go.jp/records/81759
6050c9f5-47a4-4129-ba1c-f8c09cc89c33
Item type 会議発表用資料 / Presentation(1)
公開日 2020-12-10
タイトル
タイトル Membrane-heater-integrated LSI for on-site annealing-recovery from 20kGy gamma ray irradiation damage
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Gong, Tianjiao

× Gong, Tianjiao

WEKO 922180

Gong, Tianjiao

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Suzuki, Yukio

× Suzuki, Yukio

WEKO 922181

Suzuki, Yukio

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Takeyama, Akinori

× Takeyama, Akinori

WEKO 922182

Takeyama, Akinori

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 922183

Ohshima, Takeshi

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Shuji Tanaka

× Shuji Tanaka

WEKO 922184

Shuji Tanaka

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Akinori, Takeyama

× Akinori, Takeyama

WEKO 922185

en Akinori, Takeyama

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 922186

en Takeshi, Ohshima

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内容記述タイプ Abstract
内容記述 In this study, we proposed a novel membrane-heater integrated LSI for on-site annealing-recovery from TID effect with low energy consumption, aiming at solving the problem of IC damage by gamma ray irradiation. The heater and membrane structure were fabricated around the LSI by using integrated MEMS technology. 20 kGy gamma-ray irradiation was performed later on the LSI samples and then the irradiated samples were annealed for recovery by integrated membrane-heater. It was found that the current of LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing
at 300 ℃. We report, for the first time, the successful recovery of LSI with 15 minutes from 20 kGy gamma-ray TID damage by using an integrated membrane-heater.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 The 34th International Conference on Micro Electro Mechanical Systems (IEEE MEMS 2021)
発表年月日
日付 2021-01-26
日付タイプ Issued
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