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THz FELからの単一パルスの取り出しのためのプラズマスイッチの研究
https://repo.qst.go.jp/records/81114
https://repo.qst.go.jp/records/81114e2352d19-e736-4be9-b8f5-bc721e794d7b
Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2020-08-25 | |||||
タイトル | ||||||
タイトル | THz FELからの単一パルスの取り出しのためのプラズマスイッチの研究 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
川瀬, 啓悟
× 川瀬, 啓悟× 誉田, 義英× 磯山, 悟朗× Kawase, Keigo |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A free electron laser (FEL) oscillator generates intense lights by successively amplifying the lights through the FEL interaction inside the optical resonator. Although the lights extracted from the resonator in general consist of a pulse train with the duration of a few microseconds, there is some requirement to use a single pulse. Thus, we are conducting to develop the single pulse extraction with the reflective switch consisting of the laser induced plasma on the surface of a semiconductor wafer. In this study, we are experimentally evaluating characteristics of the semiconductor reflective switches for the different semiconductors and the different laser irradiances. We report the summary of the experimental results up to now. | |||||
書誌情報 |
第17回日本加速器学会年会プロシーディングス 発行日 2020-09 |