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  1. 原著論文

Synchrotron X-ray standing wave Characterization of atomic arrangement at interface between transferred graphene and α-Al2O3(0001)

https://repo.qst.go.jp/records/80998
https://repo.qst.go.jp/records/80998
34d320d6-38eb-4a4c-bdd2-2fc14bf7c2e8
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-10-21
タイトル
タイトル Synchrotron X-ray standing wave Characterization of atomic arrangement at interface between transferred graphene and α-Al2O3(0001)
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Entani, Shiro

× Entani, Shiro

WEKO 1002730

Entani, Shiro

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Honda, Mitsunori

× Honda, Mitsunori

WEKO 1002731

Honda, Mitsunori

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Naramoto, Hiroshi

× Naramoto, Hiroshi

WEKO 1002732

Naramoto, Hiroshi

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Songtian, Li

× Songtian, Li

WEKO 1002733

Songtian, Li

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Sakai, Seiji

× Sakai, Seiji

WEKO 1002734

Sakai, Seiji

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Shiro, Entani

× Shiro, Entani

WEKO 1002735

en Shiro, Entani

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Hiroshi, Naramoto

× Hiroshi, Naramoto

WEKO 1002736

en Hiroshi, Naramoto

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Songtian, Li

× Songtian, Li

WEKO 1002737

en Songtian, Li

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Seiji, Sakai

× Seiji, Sakai

WEKO 1002738

en Seiji, Sakai

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抄録
内容記述タイプ Abstract
内容記述 Graphene is expected to be one of the most promising materials for nanoelectronics and spintronics. In most graphene-based devices, the graphene channel is placed on insulating substrates. Therefore, the study of interfacial interactions between graphene and the insulator surface is of critical importance. In this study, the vertical arrangement of graphene which is transferred on α-Al2O3(0001) has been studied by normal incidence X-ray standing wave (NIXSW) technique. The analysis of the NIXSW profile reveals that the graphene layer is located at 3.57 Å above the α-Al2O3(0001) surface, which is larger than the interlayer distance of graphite (3.356 Å). Micro-Raman spectroscopy shows that the transferred graphene has a limited spatial distribution of hole concentration. The present study shows that transferred graphene on the sapphire substrate followed by vacuum-annealing has an atomically flat surface free from residual contaminations such as organic compounds and there occurs the hole-doping in graphene.
書誌情報 Surface Science

巻 704, p. 121749, 発行日 2021-02
出版者
出版者 Elsevier
ISSN
収録物識別子タイプ ISSN
収録物識別子 0039-6028
DOI
識別子タイプ DOI
関連識別子 10.1016/j.susc.2020.121749
関連サイト
識別子タイプ URI
関連識別子 https://www.sciencedirect.com/science/article/pii/S0039602820307135
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