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  1. 原著論文

Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

https://repo.qst.go.jp/records/80869
https://repo.qst.go.jp/records/80869
10f0ab21-68cf-4b05-a41d-0b68fddc1fc6
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-11-02
タイトル
タイトル Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Capan, Ivana

× Capan, Ivana

WEKO 1002892

Capan, Ivana

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Brodar, Tomislav

× Brodar, Tomislav

WEKO 1002893

Brodar, Tomislav

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Yamazaki, Yuichi

× Yamazaki, Yuichi

WEKO 1002894

Yamazaki, Yuichi

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Oki, Yuya

× Oki, Yuya

WEKO 1002895

Oki, Yuya

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 1002896

Ohshima, Takeshi

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Chiba, Yoji

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WEKO 1002897

Chiba, Yoji

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Hijikata, Yasuto

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WEKO 1002898

Hijikata, Yasuto

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Snoj, Luka

× Snoj, Luka

WEKO 1002899

Snoj, Luka

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Vladimir, Radulović

× Vladimir, Radulović

WEKO 1002900

Vladimir, Radulović

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Yuichi, Yamazaki

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WEKO 1002901

en Yuichi, Yamazaki

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Yuya, Oki

× Yuya, Oki

WEKO 1002902

en Yuya, Oki

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1002903

en Takeshi, Ohshima

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抄録
内容記述タイプ Abstract
内容記述 We report on influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier related trap, neutron irradiation has introduced two deep traps, labeled as EH1 and EH3 with the activation energies for electron emission estimated as 0.4 and 0.7 eV bellow the conduction band, respectively. Based on Laplace deep level transient spectroscopy (DLTS) results, we have assigned EH1 trap to silicon vacancy (VSi). Two minority carrier traps labelled as B and D-center were detected by minority transient spectroscopy (MCTS) and assigned to substitutional boron BSi and BC, respectively. Activation energies for hole emission for B and D-center are estimated as 0.27 and 0.60 eV above the valence band, respectively. We have identified two emission lines for D-center by Laplace-MCTS measurements and assigned them to BC sitting at hexagonal (−h) and cubic (−k) lattice sites.
書誌情報 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

巻 478, p. 224-228, 発行日 2020-09
出版者
出版者 Elsevier
ISSN
収録物識別子タイプ ISSN
収録物識別子 0168-583X
DOI
識別子タイプ DOI
関連識別子 10.1016/j.nimb.2020.07.005
関連サイト
識別子タイプ URI
関連識別子 https://www.sciencedirect.com/science/article/pii/S0168583X20303359
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