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  1. 原著論文

High-thermal-conductivity SiC ceramic mirror for high-average-power laser system

https://repo.qst.go.jp/records/80658
https://repo.qst.go.jp/records/80658
20575d3a-9df6-49b0-920f-6caacef25697
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-08-05
タイトル
タイトル High-thermal-conductivity SiC ceramic mirror for high-average-power laser system
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Miyasaka, Yasuhiro

× Miyasaka, Yasuhiro

WEKO 1011862

Miyasaka, Yasuhiro

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Kondo, Kotaro

× Kondo, Kotaro

WEKO 1011863

Kondo, Kotaro

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Kiriyama, Hiromitsu

× Kiriyama, Hiromitsu

WEKO 1011864

Kiriyama, Hiromitsu

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Yasuhiro, Miyasaka

× Yasuhiro, Miyasaka

WEKO 1011865

en Yasuhiro, Miyasaka

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Kotaro, Kondo

× Kotaro, Kondo

WEKO 1011866

en Kotaro, Kondo

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Hiromitsu, Kiriyama

× Hiromitsu, Kiriyama

WEKO 1011867

en Hiromitsu, Kiriyama

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抄録
内容記述タイプ Abstract
内容記述 The importance of heat-resistant optics is increasing as the average power of high-intensity lasers increases. A silicon carbide (SiC) ceramic with high thermal conductivity is proposed as an optics substrate to suppress the thermal effect. The temperature rise of the substrate and the change in the surface accuracy of the mirror surface, which degrade the laser beam quality, are investigated. Gold mirrors on synthetic fused silica and SiC ceramic substrates are heated with a 532 nm wavelength laser diode. The synthetic fused silica substrate placed on an aluminum block shows a temperature increase by ~32 °C and a large temperature gradient. In contrast, the SiC ceramic substrate shows a uniform temperature distribution and a temperature increase by only ~4 °C with an absorbed power of ~2 W after 20 min laser irradiation. The surface accuracy (roughness) of the synthetic fused silica changes from /21.8 (29.0 nm) to /7.2 (88.0 nm), increasing by a factor of ~3.0 due to the expansion of the center. However, that of the SiC ceramic mirror changes from /21.0 (30.2 nm) to /13.3 (47.7 nm), increasing by a factor of ~1.6 while maintaining the same temperature distribution after laser irradiation.
書誌情報 Crystals

巻 10, 号 9, p. 831, 発行日 2020-09
出版者
出版者 MDPI journals
ISSN
収録物識別子タイプ ISSN
収録物識別子 2073-4352
DOI
識別子タイプ DOI
関連識別子 10.3390/cryst10090831
関連サイト
識別子タイプ URI
関連識別子 https://www.mdpi.com/2073-4352/10/9/831
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