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Developments of (Ba,Na)Fe2As2 and CaKFe4As4 HIP round wires
https://repo.qst.go.jp/records/80653
https://repo.qst.go.jp/records/80653e12dc4c6-5e67-4df8-b38d-528b5d240d6e
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-09-30 | |||||
| タイトル | ||||||
| タイトル | Developments of (Ba,Na)Fe2As2 and CaKFe4As4 HIP round wires | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Tamegai, T
× Tamegai, T× Pyon, S× Takano, Katsutoshi× Kajitani, Hideki× Koizumi, Norikiyo× Katsutoshi, Takano× Hideki, Kajitani× Norikiyo, Koizumi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | With excellent superconducting properties such as high Tc, large Hc2, small anisotropy, and large Jc, developments of superconducting wires and tapes of iron-based superconductors (IBSs) have been undertaken with promising results. So far, K-doped 122-type IBSs have been mainly developed for such purposes. Here, efforts to fabricate Na-doped 122-type IBS,(Ba,Na)Fe2As2, are presented. With the help of hot isostatic pressing (HIP) process, excellent Jc characteristics of up to 44 kA cm−2 at 4.2 K under 100 kOe have been achieved. Detailed characterizations of (Ba,Na)Fe2As2 HIP round wire are presented. On the other hand,discoveries of new IBSs continue, with CaKFe4As4 as one of recent examples. CaKFe4As4 belongs to a new family of IBSs with 1144 structure, where Ca and K occupy the Ba site in BaFe2As2 alternately along the c-axis. Studies on CaKFe4As4 single crystals have demonstrated moderately large Jc with peculiar anisotropic properties related to the presence of novel planar defects. We have also fabricated HIP round wires of CaKFe4As4, and reported their basic characterizations. Despite the instability of CaKFe4As4 at low temperatures, Jc values at 4.2 K close to 100 kA cm−2 at self-field and 7.6 kA cm−2 at 100 kOe are achieved. Attempts to introduce defects into CaKFe4As4 single crystals, chemically by Co substitution and physically by proton irradiation, are attempted, and the effects are compared. Attempts to fabricate Co-doped CaKFe4As4 HIP round wires with limited success are also reported. | |||||
| 書誌情報 |
Superconductor Science and Technology 巻 33, p. 104001, 発行日 2020-08 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0953-2048 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1088/1361-6668/abaa38 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://iopscience.iop.org/article/10.1088/1361-6668/abaa38/meta | |||||
