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Optical properties of neodymium ions in nanoscale regions of gallium nitride
https://repo.qst.go.jp/records/80535
https://repo.qst.go.jp/records/805357a67bf96-d5ed-4506-9897-9e90b7bec730
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-09-11 | |||||
| タイトル | ||||||
| タイトル | Optical properties of neodymium ions in nanoscale regions of gallium nitride | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Deki, Manato× Watanabe, Hirotaka× Nitta, Shugo× Honda, Yoshio× Nishimura, Tomoaki× C. Gibson, Brant× D. Greentree, Andrew× Amano, Hiroshi× Ohshima, Takeshi× Sato, Shinichiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Wide bandgap semiconductors are increasingly important for bioimaging applications, as they can possess good biocompatibility and host a large range of fluorescent defects spanning the visible to infrared. Gallium nitride is one promising host for photostable fluorophores. In particular, neodymium (Nd)-doped gallium nitride (GaN) shows bright near infrared fluorescence and narrow room temperature linewidth and is therefore a candidate material for fluorescent probes for bioimaging. To explore the conditions necessary to generate biomarkers based on Nd:GaN, this paper reports the room temperature photoluminescence (PL) properties of small ensembles of Nd ions implanted into nanoscale regions of GaN epilayers. The minimum volume of Nd-implanted GaN which can be optically detected in this study is about 8E+4 nm^3 and the minimum detected ensemble of Nd ions is about 4E3, although not all of implanted Nd ions activate as luminescence centers. We show from the PL excitation spectra that the strongest resonant excitation appears at 619 nm, attributed to the 4I9/2 → 4G5/2 (4G7/2) transition in the 4f-shell. We measure the luminescence lifetime to be several tens of microseconds. We also identify the presence of a different excitation mechanism from the resonant excitation when excited below 510 nm (above 2.43 eV). |
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| 書誌情報 |
Optical Materials Express 巻 10, 号 10, p. 2614-2623, 発行日 2020-09 |
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| 出版者 | ||||||
| 出版者 | OSA Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0740-3224 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1364/OME.401765 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.osapublishing.org/ome/abstract.cfm?uri=ome-10-10-2614 | |||||
