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Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
https://repo.qst.go.jp/records/80474
https://repo.qst.go.jp/records/80474a26b5631-df58-4132-a393-526196d9fc4d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-21 | |||||
| タイトル | ||||||
| タイトル | Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takeyama, Akinori
× Takeyama, Akinori× Shimizu, Keigo× Makino, Takahiro× Yamazaki, Yuichi× Shin-Ichiro, Kuroki× Tanaka, Yasunori× Ohshima, Takeshi× Takeyama, Akinori× Makino, Takahiro× Yamazaki, Yuichi× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon carbide junction field effect transistors (SiC JFETs) were irradiated with gamma-rays up to 9 MGy (H2O). With increasing dose, apparent shift of drain current- gate voltage (ID-VG) curves to negative voltage side as observed for SiC metal oxide semiconductor (MOS) FETs did not take place. No significant difference is observed between drain and gate leakage currents of irradiated JFETs. This strongly indicates that defects as leakage paths were introduced into not bulk region but the interface between bulk and the passivation layer of SiO2. While, the transfer characteristics including threshold voltage and transconductance were slightly changed compared with the pristine sample. After drain voltage (VD) was abruptly applied to 6 V, ID at VG= 0 V increased slowly as a function of time. This indicates that variation of transfer characteristics is attributed to capture and emission process at defects generated in channel region. | |||||
| 書誌情報 |
Materials Science Forum 巻 1004, p. 1109-1114, 発行日 2020-07 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications Ltd. | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.1004.1109 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net/MSF.1004.1109 | |||||
