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In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates
https://repo.qst.go.jp/records/80064
https://repo.qst.go.jp/records/8006466b8e6ab-bd90-4c72-acf7-76c114073db4
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-15 | |||||
| タイトル | ||||||
| タイトル | In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Fuke, Seiya
× Fuke, Seiya× 佐々木, 拓生× 高橋, 正光× Hibino, Hiroki× Sasaki, Takuo× Takahashi, Masamitsu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In-situ X-ray diffraction was used to investigate the initial stages of GaN growth on graphene-covered SiO2 substrates with or without AlN buffer layers by plasma-assisted molecular beam epitaxy. The in-plane lattice parameter of GaN remained almost constant during growth without AlN buffer layers, confirming weak interactions between GaN and graphene. On the substrate with AlN buffer layers, the GaN lattice parameter continuously changed from an AlN value to GaN value, indicating that the AlN islands act as seeds for GaN growth. Besides, GaN has preferential orientations epitaxial to graphene. Graphene can be used as a template of GaN growth on amorphous substrates. | |||||
| 書誌情報 |
Japanese Journal of Applied Physics 巻 59, p. 070902-1-070902-4, 発行日 2020-06 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-4922 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.35848/1347-4065/ab9760 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://iopscience.iop.org/article/10.35848/1347-4065/ab9760 | |||||
