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Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in-situ synchrotron X-ray diffraction
https://repo.qst.go.jp/records/79827
https://repo.qst.go.jp/records/79827d2849cf3-d050-4d4c-ace5-7ea2e700e7b2
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-04-08 | |||||
| タイトル | ||||||
| タイトル | Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in-situ synchrotron X-ray diffraction | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Suzuki, Hidetoshi
× Suzuki, Hidetoshi× Ishikawa, Fumitaro× Sasaki, Takuo× Takahashi, Masamitsu× Sasaki, Takuo× Takahashi, Masamitsu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We carry out real-time in situ synchrotron X-ray diffraction on the growth of GaN and AlN on SiC(0001) substrate by molecular beam epitaxy. At the initial growth stage of GaN/SiC or AlN/SiC heterostructure, the epitaxial overlayer develops affected by defects with the strain interaction between SiC, eventually showing characteristic lattice deformations. GaN was almost relaxed at the initial stage, showing the transition of the growth mode from 3D to 2D at around 4 nm. In contrast, AlN coherently grow on SiC(0001) at the initial stage for 13 nm concomitantly showing lattice deformation with the beneath SiC, subsequently showing gradual lattice relaxation. | |||||
| 書誌情報 |
Applied Physics Express 巻 13, p. 055501-1-055501-5, 発行日 2020-04 |
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| 出版者 | ||||||
| 出版者 | The Japan Society of Applied Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1882-0778 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.35848/1882-0786/ab84bf | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://iopscience.iop.org/article/10.35848/1882-0786/ab84bf | |||||
