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Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID
https://repo.qst.go.jp/records/79204
https://repo.qst.go.jp/records/792041ac7b09a-51dd-4723-8aca-6ebb987dbe64
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-03-05 | |||||
| タイトル | ||||||
| タイトル | Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Kobayashi, Daisuke
× Kobayashi, Daisuke× Hirose, Kazuyuki× Sakamoto, Keita× Okamoto, Shogo× Baba, Shunsuke× Shindo, Hiroyuki× Kawasaki, Osamu× Makino, Takahiro× Ohshima, Takeshi× Mori, Yoshiharu× Matsuura, Daisuke× Kusano, Masaki× Narita, Takanori× Daisuke, Kobayashi× Kazuyuki, Hirose× Hiroyuki, Shindo× Takahiro, Makino× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication and further across time. Mechanisms of postfabrication variations include total ionizing dose (TID) effects, which are caused by long-term radiation exposure. This synergistic effect of TID on SEU hardness is a particular concern in integrated circuits used in space and nuclear radiation environments. This article shows that an electrical parameter called the data-retention voltage is useful in dealing with such TID effects on the SEU hardness of static random access memories (SRAMs), which are known to be particularly radiation-sensitive. Experiments showed that TID-induced variations in SRAM SEU hardness, i.e., variations in SEU cross sections, were predicted by measuring the data-retention voltage. In addition, these variations were canceled out by adjusting the power supply voltage according to its interesting relationship to the data-retention voltage. Results suggest that it might be possible in flight to predict and cancel out SEU hardness variations caused by TID and other synergistic effects. | |||||
| 書誌情報 |
IEEE Transactions on Nuclear Science 巻 67, 号 1, p. 328-335, 発行日 2020-01 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0018-9499 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/TNS.2019.2956760 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://ieeexplore.ieee.org/document/8918112/ | |||||
