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Wavelength Dependence of the Laser-Excitation Process on a Silicon Surface
https://repo.qst.go.jp/records/79042
https://repo.qst.go.jp/records/79042d607480e-4644-4138-91ad-14e5bad0d64a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-12-18 | |||||
| タイトル | ||||||
| タイトル | Wavelength Dependence of the Laser-Excitation Process on a Silicon Surface | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Otobe, Tomohito
× Otobe, Tomohito× Tomohito, Otobe |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We report a first-principle calculation for the wavelength-dependence of a laser excitation process on a silicon surface. Although lower frequency laser is reflected by a lower density plasma, it can penetrate thicker plasma sheet. Therefore, the depth of the laser processing depends on the width of the plasma at the surface and laser wavelength. The time-dependent density-functional theory and Maxwell’s equations are simultaneously employed to elucidate the effect of laser propagation on laser-matter interaction under ultrafast pulse lasers (FWHM:12 fs). A longer-wavelength laser field facilitates deeper melting and ablation in silicon, despite a lower critical plasma density. Such a deeper excitation by a longer wavelength is because of the penetration of the laser field through the plasma on the surface. The plasma-formation depth is saturated at approximately half the wavelength in silicon. |
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| 書誌情報 |
Physical Review Applied 巻 13, p. 024062-1-024062-6, 発行日 2020-02 |
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| 出版者 | ||||||
| 出版者 | American Physical Society | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2331-7019 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1103/PhysRevApplied.13.024062 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.024062 | |||||
