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Photon emission enhancement of praseodymium ions implanted with GaN nanopillars
https://repo.qst.go.jp/records/79003
https://repo.qst.go.jp/records/79003d14b6158-dedf-42a3-9487-94a6ff068e0b
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-02-19 | |||||
| タイトル | ||||||
| タイトル | Photon emission enhancement of praseodymium ions implanted with GaN nanopillars | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Deki, Manato× Li, Shuo× Nishimura, Tomoaki× Greentree, Andrew× Gibson, Brant× Ohshima, Takeshi× Sato, Shinichiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Lanthanoid (Ln)-doped Gallium Nitride (GaN) have attracted attentions because of their high intensity luminescence and sharp room-temperature (RT) optical linewidth. These superior luminescent properties are quite attractive for the application of single photon source (SPS) which is a key technology for quantum computing, quantum sensing, and quantum key distribution. However, one of the challenges to realize Ln-doped GaN SPS is the long luminescent transition lifetime, resulting in the low photon counts insufficient to optically detect isolated single Ln ions. Confinement of luminescent centers into nanometersized regions is an effective method to enhance their photon emission and we here we show that confinement into GaN nanopillars enhances photon emission from implanted praseodymium (Pr) ions at RT. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 8th International Conference on Nanoscience and Nanotechnology (ICONN2020) | |||||
| 発表年月日 | ||||||
| 日付 | 2020-02-12 | |||||
| 日付タイプ | Issued | |||||
