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Nitrogen Vacancy Center Created by Anisotropic and Hydrostatic High-Pressure-High-Temperature Treatment after Electron Irradiation
https://repo.qst.go.jp/records/78278
https://repo.qst.go.jp/records/78278142711c8-2783-454b-b118-34fb37871492
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-12-28 | |||||
| タイトル | ||||||
| タイトル | Nitrogen Vacancy Center Created by Anisotropic and Hydrostatic High-Pressure-High-Temperature Treatment after Electron Irradiation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Onoda, Shinobu
× Onoda, Shinobu× Higuchi, Taisei× Saiki, Seiichi× Saito, Hiroyuki× Nishihara, Yu× Kada, Wataru× Hanaizumi, Osamu× Ohshima, Takeshi× Onoda, Shinobu× Higuchi, Taisei× Saiki, Seiichi× Saito, Hiroyuki× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Nitrogen vacancy (NV) center is composed of a substitutional nitrogen and a vacancy on adjacent lattice sites in diamond. An electron spin of NV center can be detected and manipulated at room temperature, and spin state are utilized for quantum sensors for measuring small physical quantities. In order to improve the sensitivity of quantum sensors, it is important to create an NV center at a high concentration with controlled orientation. An electron beam which enables to introduce vacancies in nitrogen rich diamond substrate is useful to create dense NV centers. The highest NV concentration of 45 ppm has been achieved by combination of the electron beam irradiation with high temperature annealing in vacuum condition. However, orientation of NV centers created by the electron beam is always random. On the other hand, chemical vapor deposition (CVD) technique has realized the orientation of NV centers. A disadvantage of CVD technique is less NV center concentration compared with electron beam technique. In 2014, ab initio theoretical calculation showed that the orientation of NV centers can be controlled by high temperature annealing in the presence of strain. In this study, the anisotropic high-pressure-high-temperature (HPHT) treatment was applied to introduce the strain during high temperature annealing. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 2nd International Forum on Quantum Metrology and Sensing (IFQMS) | |||||
| 発表年月日 | ||||||
| 日付 | 2019-12-17 | |||||
| 日付タイプ | Issued | |||||
