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Fluorescent Defect Formation in Single Crystalline Diamond by Focused Proton Irradiation

https://repo.qst.go.jp/records/78276
https://repo.qst.go.jp/records/78276
fa900aec-e002-48dd-8dd7-eaf0804c0b20
Item type 会議発表用資料 / Presentation(1)
公開日 2019-12-28
タイトル
タイトル Fluorescent Defect Formation in Single Crystalline Diamond by Focused Proton Irradiation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Kada, W.

× Kada, W.

WEKO 827718

Kada, W.

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Haruyama, M.

× Haruyama, M.

WEKO 827719

Haruyama, M.

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Higuchi, Taisei

× Higuchi, Taisei

WEKO 827720

Higuchi, Taisei

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Suda, Y.

× Suda, Y.

WEKO 827721

Suda, Y.

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Onoda, Shinobu

× Onoda, Shinobu

WEKO 827722

Onoda, Shinobu

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 827723

Ohshima, Takeshi

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Miura, K.

× Miura, K.

WEKO 827724

Miura, K.

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Hanaizumi, O.

× Hanaizumi, O.

WEKO 827725

Hanaizumi, O.

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Higuchi, Taisei

× Higuchi, Taisei

WEKO 827726

en Higuchi, Taisei

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Onoda, Shinobu

× Onoda, Shinobu

WEKO 827727

en Onoda, Shinobu

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 827728

en Ohshima, Takeshi

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抄録
内容記述タイプ Abstract
内容記述 Creation of fluorescent defects at desired position and structures will play an important role for development of quantum devices. Compared to other microfabrication techniques, focused particle beam is excellent tool for defect engineering on wide band-gap semiconductors. There are several studies on micro-processing using various focused particle beam writing (PBW) techniques and some among them successfully demonstrated fabrication of graphite structures in diamond. Recently, we succeeded to control the depth of the micrometer-scaled processed layer by changing energy of the focused ions.These techniques would be applicable to form defects of fluorescent centers in diamond by precise control of PBW microprobe.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 23rd International Workshop on Inelastic Ion-Surface Collisions (IISC-23)
発表年月日
日付 2019-11-18
日付タイプ Issued
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