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Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
https://repo.qst.go.jp/records/78269
https://repo.qst.go.jp/records/78269e42f88a9-4575-4843-bdcb-9344931bf57c
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-12-28 | |||||
| タイトル | ||||||
| タイトル | Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Niethammer, Matthias
× Niethammer, Matthias× Widmann, Matthias× Rendler, Torsten× Morioka, Naoya× Yu-Chen, Chen× Rainer, Stöhr× Ul Hassan, Jawad× Onoda, Shinobu× Ohshima, Takeshi× Sang-Yun, Lee× Mukherjee, Amlan× Isoya, Junichi× Tien Son, Nguyen× Jörg, Wrachtrup× Shinobu, Onoda× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices. | |||||
| 書誌情報 |
Nature Communications 巻 10, p. 5569, 発行日 2019-12 |
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| 出版者 | ||||||
| 出版者 | Springer Nature | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2041-1723 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1038/s41467-019-13545-z | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.nature.com/articles/s41467-019-13545-z | |||||
