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Fabrication and investigation of graphene/full Heusler alloy heterostructure for spintronics
https://repo.qst.go.jp/records/78024
https://repo.qst.go.jp/records/78024120d26a7-de71-4d93-839c-1dc1dc9cb186
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-12-17 | |||||
| タイトル | ||||||
| タイトル | Fabrication and investigation of graphene/full Heusler alloy heterostructure for spintronics | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
李, 松田
× 李, 松田× V. Larionov, Konstantin× I. Popov, Zakhar× Entani, Shiro× Amemiya, Kenta× V. Avramov, Pavel× Sakuraba, Yuya× Naramoto, Hiroshi× B. Sorokin, Pavel× Sakai, Seiji× Songtian, Li× Entani, Shiro× Sakai, Seiji |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | For years graphene has been considered as the most potential material which paves the way to advanced high-performance spintronic devices due to its extraordinary electrical and physical properties. The long spin diffusion length in graphene originated from the weak spin-orbit interaction and high electron mobility has stimulated numerous studies on developing graphene-based lateral spin valves (SV) in the past decade [1]. Apart from the application to lateral SV dealing with in-plane spin transportation in a graphene channel, another potential application that is the implementation of graphene as a spacer material in vertical SV has become a subject of intense interest in recent years [2]. In those reported graphene-spintronic devices, conventional ferromagnets such as NiFe and Co etc. of low spin polarization have been used due to the well-established synthesis method of graphene on them. However, the low spin signal and tiny magnetoresistance effect reported in those systems make graphene still far from being considered satisfactory for spintronic device applications. Adopting highly spin-polarized material such as half-metals can be the most effective way to improve the performance of graphene spintronic devices, the experimental demonstration, however, is still lacking. Here, we report the demonstration of the in-situ fabrication of a novel heterostructure consisting of graphene and full Heusler alloy Co2Fe(Ge0.5Ga0.5) (CFGG), in which half-metallicity has been confirmed experimentally [3]. Single layer graphene was prepared by in situ chemical vapor deposition on a magnetron sputtered epitaxial CFGG thin film grown on single crystalline MgO(001) substrate. As shown by the RHEED images in Fig. 1, the sharp streaky patterns from both graphene and CFGG indicate an atomic flatness of the SLG/CFGG interface. The high quality of graphene was further confirmed by Raman spectroscopy. A depth-resolved XMCD study reveals that the CFGG surface adjacent to SLG possesses a robust magnetic moment comparable to the bulk CFGG (Fig. 2) in association with the weak interfacial interaction between graphene on CFGG. This finding is in sharp contrast to the large reduction of the magnetic moment reported in other graphene/ferromagnets heterostructures. DFT calculations show that, the inherent properties such as half-metallicity of CFGG and the linear Dirac band of graphene are preserved at the interface. These findings are highly promising for realizing effective transport of highly spin-polarized electrons in graphene-based spintronic devices [1]W. Han et al, Nat. Nanotechnol. 9, 794 (2014) [2] E. D. Cobas, et al, ACS Nano 10, 10357 (2016) [3] S. Li et al, Appl. Phys. Lett. 103, 042405 (2013) |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 63th international conference on Magnetism and Magnetic Materials (MMM) 2019に出席するため | |||||
| 発表年月日 | ||||||
| 日付 | 2019-11-07 | |||||
| 日付タイプ | Issued | |||||
