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Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment
https://repo.qst.go.jp/records/77970
https://repo.qst.go.jp/records/779703ed2ee20-3d13-445e-99fb-138d41172ed9
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-12-13 | |||||
| タイトル | ||||||
| タイトル | Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Chiba, Yoji
× Chiba, Yoji× Yamazaki, Yuichi× Sato, Shinichiro× Makino, Takahiro× Yamada, Naoto× Sato, Takahiro× Hijikata, Yasuto× Ohshima, Takeshi× Chiba, Yoji× Yamazaki, Yuichi× Sato, Shinichiro× Makino, Takahiro× Yamada, Naoto× Sato, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of VSi- PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that the improvement of the ODMR contrast was caused by the reduction of other irradiation induced defect centers, such as EH1/EH3 centers. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | International Conference on Silicon Carbide and Related Materials | |||||
| 発表年月日 | ||||||
| 日付 | 2019-10-01 | |||||
| 日付タイプ | Issued | |||||
