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Luminescence Properties of Implanted Nd Ions into Submicron Regions of GaN Semiconductor
https://repo.qst.go.jp/records/77806
https://repo.qst.go.jp/records/77806771addd7-59d2-46b3-97bf-1cec4e5f5820
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-15 | |||||
| タイトル | ||||||
| タイトル | Luminescence Properties of Implanted Nd Ions into Submicron Regions of GaN Semiconductor | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Deki, Manato× Nishimura, Tomoaki× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Lanthanoid-doped gallium nitride (GaN) semiconductors have attracted attention because of their high intensity luminescence and sharp room-temperature (RT) optical linewidth. GaN surfaces can be chemically functionalized and nanometer-sized particles are available, opening the door to lifescience applications such as bioimaging and biosensing. Neodymium (Nd)-doped GaN is of strong interest due to its strong near infrared luminescence at 0.9~1.1 µm which is suitable for optical imaging in biological tissues. To realize bioimaging/sensing using Nd-doped GaN nanoparticles, the small ensemble of Nd ions has to be optically detected at RT with high contrast. This paper reports photoluminescence of Nd ions implanted into submicron regions of GaN epilayer and their luminescence properties at RT. The Nd implanted square regions with the side of 250 nm were optically detected. The minimum size which was successfully fabricated and optically detected was 150 nm in this study, which supports further investigations into fluorescent nanoparticles for bioimaging applications. In the presentation, PL spectra, PL excitation spectra, saturation behavior, and luminescent transition lifetime at RT will be discusse | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 29th Annual Meeting of MRS-J | |||||
| 発表年月日 | ||||||
| 日付 | 2019-11-27 | |||||
| 日付タイプ | Issued | |||||
