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Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage
https://repo.qst.go.jp/records/77672
https://repo.qst.go.jp/records/7767293cfa4a3-50e9-40b9-9979-724c95dbb7d2
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-28 | |||||
| タイトル | ||||||
| タイトル | Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Kobayashi, Daisuke
× Kobayashi, Daisuke× Hayashi, Naoki× Hirose, Kazuyuki× Kakehashi, Yuya× Kawasaki, Osamu× Makino, Takahiro× Ohshima, Takeshi× people, Others,many× Takahiro, Makino× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhibit undesired reversals of memory bits, called single-event upsets or soft errors. Sensitivity to such undesired events is widely quantified with the parameter of cross sections, which varies from cell to cell due to process variations. Many efforts have been made to quantify such variations, most commonly using simulations that often become a hurdle especially for commercial-off-the-shelf SRAMs. In this regard, an analysis method is proposed to extract such variations easily from radiation test data. It relies on the data retention voltage, which is an electrical parameter associated with the static noise margin. This voltage can be measured on a desk without special circuits. The validity of the proposed method is experimentally demonstrated using SRAM fabricated in a 65-nm silicon-on-insulator technology, which was exposed to various high-energy heavy ions simulating the effects of galactic and terrestrial cosmic rays. Theoretical discussion provides further evidence, while revealing an interesting relationship between the data retention voltage and power supply voltage. This relationship suggests power-supply voltage tuning to deal with chip-to-chip variations in cross sections and also with similar variations caused by total-dose effects and aging effects such as negative bias temperature instability. | |||||
| 書誌情報 |
IEEE Transactions on Nuclear Science 巻 66, 号 1, p. 155-162, 発行日 2019-01 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0018-9499 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/TNS.2018.2882221 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://ieeexplore.ieee.org/document/8540420 | |||||
