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  1. 原著論文

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

https://repo.qst.go.jp/records/77645
https://repo.qst.go.jp/records/77645
8cd31825-66a1-41fa-9125-0ae72cf3c233
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-11-27
タイトル
タイトル Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Widmann, M.

× Widmann, M.

WEKO 1004705

Widmann, M.

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Niethammer, M.

× Niethammer, M.

WEKO 1004706

Niethammer, M.

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Y. Fedyanin, D.

× Y. Fedyanin, D.

WEKO 1004707

Y. Fedyanin, D.

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A. Khramtsov, I.

× A. Khramtsov, I.

WEKO 1004708

A. Khramtsov, I.

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Rendler, T.

× Rendler, T.

WEKO 1004709

Rendler, T.

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D. Booker, I.

× D. Booker, I.

WEKO 1004710

D. Booker, I.

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U Hassan, J.

× U Hassan, J.

WEKO 1004711

U Hassan, J.

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Morioka, N.

× Morioka, N.

WEKO 1004712

Morioka, N.

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Y.-C., Chen

× Y.-C., Chen

WEKO 1004713

Y.-C., Chen

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G. Ivanov, I.

× G. Ivanov, I.

WEKO 1004714

G. Ivanov, I.

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T. Son, N.

× T. Son, N.

WEKO 1004715

T. Son, N.

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 1004716

Ohshima, Takeshi

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Bockstedte, M.

× Bockstedte, M.

WEKO 1004717

Bockstedte, M.

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Gali, A.

× Gali, A.

WEKO 1004718

Gali, A.

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Bonato, C.

× Bonato, C.

WEKO 1004719

Bonato, C.

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S.-Y., Lee

× S.-Y., Lee

WEKO 1004720

S.-Y., Lee

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Jörg, Wrachtrup

× Jörg, Wrachtrup

WEKO 1004721

Jörg, Wrachtrup

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Takeshi, Ohshima

× Takeshi, Ohshima

WEKO 1004722

en Takeshi, Ohshima

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抄録
内容記述タイプ Abstract
内容記述 We investigate charge state manipulation of silicon vacancies in silicon carbide, which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide optoelectronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles
and voltage sensing in microscopic devices.
書誌情報 Nano Letters

巻 19, 号 10, p. 7173-7180, 発行日 2019-09
出版者
出版者 ACS publications
ISSN
収録物識別子タイプ ISSN
収録物識別子 1530-6984
DOI
識別子タイプ DOI
関連識別子 10.1021/acs.nanolett.9b02774
関連サイト
識別子タイプ URI
関連識別子 https://pubs.acs.org/doi/10.1021/acs.nanolett.9b02774
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