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Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
https://repo.qst.go.jp/records/77566
https://repo.qst.go.jp/records/77566a59462a4-4cd5-4d62-be38-fe3ce68e7b4d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-21 | |||||
| タイトル | ||||||
| タイトル | Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Abe, Yuta× Hijikata, Yasuto× Umeda, Takahide× Ohshima, Takeshi× Shinichiro, Sato× Takuma, Narahara× Yuta, Abe× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | NCVSi− centers in SiC [nitrogen-vacancy (NV) centers], which produce near-infrared (NIR) photoluminescence (PL) at room temperature, is expected to have applications as quantum sensors for in vivo imaging and sensing. To realize quantum sensing using NV centers, clarification of the formation mechanism as well as control of the high-density formation is necessary. This paper reports a comprehensive investigation on the NIR-PL properties originating from NV centers in high purity semi-insulating and nitrogen (N) contained 4H-SiC substrates formed by ion beam irradiation and subsequent thermal annealing. It is shown that NV centers are exclusively formed by the contained N as impurities rather than the implanted N, and also the heavier ion irradiations induce the NV center formation effectively than the lighter ion irradiations. The study on thermal annealing at different temperatures reveals that the optimal temperature is 1000 °C. From the results of temperature dependence on the PL intensity, it is shown that little thermal quenching of the PL intensity appears at room temperature and the PL signal is collected even at 783 K. The formation mechanism of NV centers is also discussed based on the obtained results. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 126, 号 8, p. 083105, 発行日 2019-08 |
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| 出版者 | ||||||
| 出版者 | AIP | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5099327 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://aip.scitation.org/doi/10.1063/1.5099327 | |||||
